A SiGe Heterostructure Bipolar Transistor for High Voltage Power Switching Applications
نویسندگان
چکیده
Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the conventional high-voltage current switching silicon BJT predicts a significant improvement of 53% in the quasi-saturation current density limit for the proposed SiGe SHBT structure at a saturation voltage drop of 0.5 volts. Key-words: Quasi-saturation, Heterojunction, SHBT, BJT, Simulation, High-voltage.
منابع مشابه
Switched-Capacitor Dynamic Threshold PMOS (SC-DTPMOS) Transistor for High Speed Sub-threshold Applications
This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of ...
متن کاملPower MOSFET Basics
Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) in high frequency applications where switching power losses are dominant. They can be paralleled b...
متن کاملSiGe-based Power Amplifier for CDMA Handset Circuitry
Technical progress in bringing SiGe heterojunction bipolar transistor (HBT) technology to reality has been exceptionally rapid. The first functional SiGe HBT was demonstrated in December 1987, only fifteen years ago. In this fifteen years, since the first demonstration of a functional transistor, SiGe HBT technology has emerged from the research laboratory, entered manufacturing on 200-mm wafer...
متن کاملDesigning a High Efficiency Igbt Series Resonant Inverter Using Fuzzy Logic Controller
-This paper analyzes a high-power (50 kW) high frequency (150 kHz) voltage-fed inverter with a seriesresonant load circuit for industrial induction heating applications, which is characterized by a full bridge inverter made of insulated-gate bipolar transistor and a power control based on pulse density modulation (PDM). This power control strategy allows the inverter to work close to the resona...
متن کاملGigahertz SiGe BiCMOS FPGAs with new architecture and novel power management techniques
Typical Field Programmable Gate Arrays (FPGAs) are generally used in signal processing, image processing and rapid prototyping applications. The integration of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices with CMOS allows a new family of FPGAs to be created. This paper elaborates new ideas in designing high-speed SiGe BiCMOS FPGAs based on the Xilinx 6200. The paper ...
متن کامل